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Optimization of a Tin/TiSi2 p+ Diffusion Barrier Process

Published online by Cambridge University Press:  25 February 2011

S.S. Lee ,
C.S. Galovich ,
K.P. Fuchs ,
D.L. Kwong ,
J. Hirvonen  and
J. Huang
S.S. Lee
Affiliation:
NCR Corporation, 1635 Aeroplaza Drive, Colorado Springs, CO 80916;
C.S. Galovich
Affiliation:
NCR Corporation, 1635 Aeroplaza Drive, Colorado Springs, CO 80916;
K.P. Fuchs
Affiliation:
NCR Corporation, 1635 Aeroplaza Drive, Colorado Springs, CO 80916;
D.L. Kwong
Affiliation:
Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, TX 78712;
J. Hirvonen
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87544
J. Huang
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87544
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Abstract

The TiN/TiSi2 structure, formed by rapid thermal nitridation of a spatter-deposited titanium film, has been demonstrated to be effective as a diffusion barrier and as a low resistance contact material for VLSI submicron metallization. An optimization experiment, designed using the RS/Discover software package, was used to identify a metallization process that minimized p+ resistance as well as maximized barrier capability. Source/drain implant doses, as-deposited titanium film thickness, and rapid thermal processing parameters were the factors varied in the experiment. Of particular significance is a comparison of the effects of a two-step versus one-step rapid thermal anneal on control of the TiN/TiSi2 thickness ratio. A TiN layer of sufficient thickness for barrier integrity and adequate consumption of implant damage in the formation of the TiSi2 layer are desired. Electrical and thermal stability measuremints of the resultant AlSiCu/TiN/TiSi2 p+ contact system are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 217
Copyright
Copyright © Materials Research Society 1989

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References

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