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PECVD Amorphous Silicon Nitride at 120°C for a-Si:H TFTs.

Published online by Cambridge University Press:  17 March 2011

Denis Stryahilev ,
Andrei Sazonov  and
Arokia Nathan
Denis Stryahilev
Affiliation:
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
Andrei Sazonov
Affiliation:
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
Arokia Nathan
Affiliation:
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
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Abstract

The effect of a-SiNx films stoichiometry and their physical properties on the electrical integrity and masking ability is studied. The films are deposited at 120° C by 13.56 MHz PECVD from SiH4+NH3 + N2 gas mixture. They have the N/Si ratio of 1.4 to 1.7 and hydrogen concentration of 25 to 40 at.%. The electrical characterization was carried out by I-V measurements. An electrical resistivity of ∼1016 Ohm-cm and breakdown voltage of 5.5 MV/cm have been achieved for our PECVD nitride films. The performance of a-Si:H TFTs with these silicon nitride as the gate dielectric and passivation layer has been also evaluated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , D5.15.1
Copyright
Copyright © Materials Research Society 2001

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References

1. Gleskova, H., Wagner, S., and Suo, Z., MRS Symp. Proc. 508 73 (1998)Google Scholar
2. Yang, C.-S., Smith, L.L., Artur, C.B., and Parsons, G., J.Vac. Sci. Tech. B18 683 (2000)Google Scholar
3. Sazonov, A., Nathan, A. and Striakhilev, D., J.Non-Cryst. Solids 266–269 1329 (2000)Google Scholar
4. Park, B., Karim, K. and Nathan, A., J.Vac. Sci. Tech. A 18(2) 688 (2000)Google Scholar
5. Bustarret, E., Bensouda, M., Habard, M.C., Bruyere, J.C., Poulin, S., Gujrathi, S.C., Phys. Rev. B38 (1988)Google Scholar
6. Parsons, G.N., Souk, J.H., and Batey, J., J.Appl.Phys. 70, 1553 (1991)Google Scholar
7. Miri, A. M. and Chamberlain, S.G., MRS Symp. Proc. 377 737 (1995)Google Scholar
8. Charania, T., Sazonov, A., Nathan, A., presented at the 2000 Meeting of the Electrochemical Society, Phoenix, AZ, October 2000 Google Scholar