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Photodefinable Metal Oxide Dielectrics: A Novel Method for Fabricating Low Cost RF Capacitive MEMS Switches

  • Guoan Wang (a1), Augustin Jeyakumar (a2), John Papapolymerou (a1) and Clifford L. Henderson (a2)
Abstract
ABSTRACT

In this paper, a novel approach for fabricating low cost capacitive RF MEMS switches using directly photodefinable high dielectric constant metal oxides has been developed. In this approach, a radiation sensitive metal-organic precursor is deposited via spin coating and converted patternwise to a high dielectric constant metal oxide via ultraviolet exposure. The feasibility of this approach is demonstrated by fabricating bridge-type and cantilever-type switches with a nitride/metal-oxide/nitride dielectric film stack. These switches exhibited significantly higher isolation and load capacitances as compared to comparable switches fabricated using a simple silicon nitride dielectric.

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Corresponding author
* E-mail: cliff.henderson@chbe.gatech.edu, Phone: (404)-385–0525
References
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  • EISSN: 1946-4274
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