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Photoluminescence Study of Thermally Treated Silicon Crystals

Published online by Cambridge University Press:  15 February 2011

J. Weber  and
R. Sauer
J. Weber
Affiliation:
Physikalisches Institut (Teil 4), Universität Stuttgart Pfaffenwaldring 57 - D 7000 Stuttgart 80, F.R. Germany
R. Sauer
Affiliation:
Physikalisches Institut (Teil 4), Universität Stuttgart Pfaffenwaldring 57 - D 7000 Stuttgart 80, F.R. Germany
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Abstract

Cz silicon samples heated to 450 ° C or higher temperatures for several hours exhibit many sharp photoluminescence lines well below the band edge. We study the production of the lines in terms of carbon and oxygen doping and of the heating temperature and duration. First results as to a level scheme of the P (0.7672 eV) line are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 165
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

1. Tajima, M., Kanamori, A., and Iizuka, T., Jpn. J. Appl. Phys. 18, 1401 (1979)Google Scholar
2. Tajima, M., Kishino, S., and Iizuka, T., ibidem 18, 1403 (1979)Google Scholar
3. Tajima, M., Kanamori, A., Kishino, S., and Iizuka, T., ibidem 19, L 755 (1980)Google Scholar
4. Nakayama, H., Katsura, J., Nishino, T., and Hamakawa, Y., J. Lumin. 24/25, 35 (1981)Google Scholar
5. Nakayama, H., Nishino, T., and Hamakawa, Y., Appl. Phys. Lett. 38, 623 (1981)Google Scholar
6. Sauer, R., and Weber, J., in “Lecture Notes in Physics”, ed. Giber, J. et al (Springer, Heidelberg), in press Google Scholar
7. Minaev, N.S., and Mudryi, A.V., phys. stat. sol. (a) 68, 561 (1981)Google Scholar
8. Kanamori, A., and Kanamori, M., J. Appl. Phys. 50, 8095 (1979)Google Scholar
9. Schmalz, K., and Gaworzewski, P., phys. stat. sol (a) 64, 151 (1981)Google Scholar
10. Tajima, M., Masui, T., Abe, T., and lizuka, T., in “Semiconductor Silicon1981”,ed. Huff, H.R., and Kriegler, R.J. (The Electrochemical Society, Pennington,N.J.), p. 72 Google Scholar
11. Mordkovich, V.N., Fiz. tverd. Tela 6, 847 (1964);Google Scholar
11a see also the listing of TD oxygen levels in Gaworzewski, P., and Schmalz, K., phys. stat. sol. (a) 55, 699 (1979)Google Scholar
12. Hare, A.P.G., Davies, G., and Collins, A.T., J. Phys. C 5, 1265 (1972)Google Scholar
13. See, e.g., the review by Sauer, R., and Weber, J., Physica B (Proc. ICDS-12,Internat. Conf. Def. Semicond., Amsterdam 1982), in press Google Scholar
14. Kaiser, W., and Keck, P.H., J. Appl. Phys. 28, 882 (1957)Google Scholar
15. Newman, R.C., and Willis, J.B., J. Phys. Chem. Solids 26, 373 (1965)Google Scholar