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Photovoltaic Effect in the Anisotype GaSe-InSe Heterojunctions Under Pressure

Published online by Cambridge University Press:  01 February 2011

S.I. Drapak ,
M.O. Vorobets  and
Z.D. Kovalyuk
S.I. Drapak
Affiliation:
I.M. Frantsevich Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, Chernivtsi Department, 5 Iryna Vilde Str., 58001, Chernivtsi, Ukraine.
M.O. Vorobets
Affiliation:
I.M. Frantsevich Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, Chernivtsi Department, 5 Iryna Vilde Str., 58001, Chernivtsi, Ukraine.
Z.D. Kovalyuk
Affiliation:
I.M. Frantsevich Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, Chernivtsi Department, 5 Iryna Vilde Str., 58001, Chernivtsi, Ukraine.
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Abstract

The influence of mechanical pressure along the direction across the interface of n-InSe-p-GaSe heterojunctions on saturation photo-e.m.f. and short-circuit current is investigated. It is shown that at the InSe/GaSe optical contacts subjected to a pressure P = 35-40 kPa an increase of the open-circuit voltage nearly twice and short-circuit current more than by a factor of five in comparison to the initial samples takes place. It makes possible to predict a possibility of considerable increasing photoconversion efficiency of such structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 865: Symposium F – Thin-Film Compound Semiconductor Photovoltaics , 2005 , F5.1
Copyright
Copyright © Materials Research Society 2005

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