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Plasma-Initiated Laser Deposition of Polycrystalline and Monocrystalline Silicon Films*

  • J. M. Gee (a1), P. J. Hargis (a1), M. J. Carr (a1), D. R. Tallant (a1) and R. W. Light (a1)...
Abstract

In this paper we report a new method of silicon deposition using the interaction between the radiation from a pulsed-ultraviolet excimer laser and the plasma species produced in a glow discharge in silane (SiH4). Examination of the deposited film by laser Raman spectroscopy and by transmission electron microscopy revealed that the morphology ranged from polycrystalline silicon at laser fluences of 0.13–0.17 J/cm2 to epitaxial silicon at fluences of 0.4–0.6 J/cm2 . Growth rates of 100 nm/min for polycrystalline silicon and 30 nm/min for monocrystalline silicon were achieved.

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This work performed at Sandia National Laboratories supported by the U. S. Department of Energy under contract number DE-AC04-76DP00789.

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1. See, for example, R. Osgood, M., Brueck, S. R. J., and Schlossberg, H. R., eds., Laser Diagnostics and Photochemical Processing for Semiconductor Devices, Mat. Res. Soc. Proc. 17 (1983).
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  • EISSN: 1946-4274
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