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Preparation and Properties of Hydrogen Ated Amorphous Germanium Nitride a-GeNx:H

Published online by Cambridge University Press:  15 February 2011

M. Hioki ,
S. Nitta ,
Y. Takeda ,
K. Yamamoto ,
M. Sasaki ,
T. Itoh  and
S. Nonomura
M. Hioki
Affiliation:
Department of Electronic & Computer Engineering, Gifu University 1–1 Yanaido, Gifu 501–11, Japan.
S. Nitta
Affiliation:
Department of Electronic & Computer Engineering, Gifu University 1–1 Yanaido, Gifu 501–11, Japan.
Y. Takeda
Affiliation:
Department of Electronic & Computer Engineering, Gifu University 1–1 Yanaido, Gifu 501–11, Japan.
K. Yamamoto
Affiliation:
Department of Electronic & Computer Engineering, Gifu University 1–1 Yanaido, Gifu 501–11, Japan.
M. Sasaki
Affiliation:
Department of Electronic & Computer Engineering, Gifu University 1–1 Yanaido, Gifu 501–11, Japan.
T. Itoh
Affiliation:
Department of Electronic & Computer Engineering, Gifu University 1–1 Yanaido, Gifu 501–11, Japan.
S. Nonomura
Affiliation:
Department of Electronic & Computer Engineering, Gifu University 1–1 Yanaido, Gifu 501–11, Japan.
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Abstract

The properties of a-GeNx:H films have been studied including the effects of oxygen and carbon impurities. The contamination of a-GeNx:H with oxygen and carbon is expressed as a-GeNx(OyCz):H, where x=N/Ge, y=O/Ge and z=C/Ge. The characteristics of a-GeNx(OyCz):H are summarized as follows: the sample is transparent at the center of a film, and the color of a film varies to light yellow and to brown at the outer edge depending on the magnetic field of the magnetron sputtering. The compositional ratios of the film vary from x=0.34 to 0.28, y=0.15 to 0.25 and z=0.05 to 0.02 at the center and at outer edge of a film, respectively. Optical gap energy EO5, obtained by the photon energy at optical absorption coefficient of 5×103 cm−1, are 2.9 eV at the center and 1.7 eV at the outer edge of a film. Eo5 increases with the nitrogen content x in a-GeNx(OyCz):H but is independent of the content of oxygen and carbon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 543
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Chambouleyron, I., Appl. Phys. Lett. 47, 117 (1985).Google Scholar
2. Honma, I., Kawai, H., Komiyama, H. and Tanaka, K., J. Appl. Phys. 65, 1074 (1989); Appl. Phys. Lett. 50, 276 (1987).Google Scholar
3. Honma, I., Komiyama, H. and Tanaka, K., J. Appl. Phys. 66, 1170 ( 1989).Google Scholar
4. Min, H., Ueda, S., Ishii, N., Kumeda, M. and Simizu, T., Journal of Non-Crystalline Solids. 198–200, 375 (1996);Google Scholar
Yokomichi, H., Okina, T., Kondo, M. and Toyoshima, Y., Journal of Non-Crystalline Solids. 198–200, 379 (1996).Google Scholar
5. Nonomura, S., Hayashi, H. and Nitta, S., Rev. Sci. Instrum. 60, 657 (1989).Google Scholar