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Preparation of Al Doped PZT Thin Films Using a Sol-Gel Method

Published online by Cambridge University Press:  10 February 2011

T. Iijima ,
N. Sanada ,
K. Hiyama ,
H Tsuboi  and
M. Okada
T. Iijima
Affiliation:
Tohoku National Industrial Research Institute, AIST, MITI, 4–2-1 Nigatake, Miyagino-ku, Sendai 983–8551, Japan, iijima@tniri.go.jp
N. Sanada
Affiliation:
Tohoku National Industrial Research Institute, AIST, MITI, 4–2-1 Nigatake, Miyagino-ku, Sendai 983–8551, Japan, iijima@tniri.go.jp
K. Hiyama
Affiliation:
YAMAHA Co, Material & Component Development Center, Toyooka 438–0192, Japan
H Tsuboi
Affiliation:
YAMAHA Co, Material & Component Development Center, Toyooka 438–0192, Japan
M. Okada
Affiliation:
YAMAHA Co, Material & Component Development Center, Toyooka 438–0192, Japan
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Abstract

Al substitution for Zr/Ti site of PZT was attempted using a sol-gel method, and the ferroelectric properties of 200nm-thick Al doped PZT thin films were compared with those of non- doped PZT film. The leakage current of the thin films decreased with increasing Al content. Ps and Pr also decreased with increasing Al content, whereas Ec did not show a significant change. Furthermore, a simple capacitor cell structure like FeRAM was prepared using a seed layer process. The capacitor structure was Pb(Ti0.975Al0.025)O3/ Pb1.1((Zr0.52Ti0.48)0. 975Al0.025)O3/ Pb(Ti0.975Al0.025)O3, and 2Pr was 26μC/cm2. The fatigue properties of the A1 doped PZT capacitor cell showed a little improvement, because the reduction rate of the fatigue was smaller than that of non-doped PZT thin film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 223
Copyright
Copyright © Materials Research Society 2000

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