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Pulsed Proton Beam Annealing of Co-Si Thin Film Systems

Published online by Cambridge University Press:  15 February 2011

L. J. Chen ,
L. S. Hung ,
J. W. Mayer  and
J. E. E. Baglin
L. J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, ROC.
L. S. Hung
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
J. W. Mayer
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
J. E. E. Baglin
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

Cobalt (∼300Å) and CoSi2 (∼1000Å) thin films on Si have been annealed by intense proton beams. RBS and TEM were performed to study ion beam annealing effects.

For ion beam energy densities above about 1 J/cm2, epitaxial CoSi2 layers were formed for both Co and polycrystalline CoSi2 on Si. At low energy densities, Co2Si was found to coexist with Co. The results are discussed in terms of eutectic melting processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 709
Copyright
Copyright © Materials Research Society 1983

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References

REFERENCES

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