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Reliable InGaAsP/GaAs 40W lasers grown in solid source MBE with phosphorus-cracker
Published online by Cambridge University Press: 15 March 2011
Abstract
Laser structures with InGaAsP quantum well were grown on GaAs substrates in a solid source MBE system. Threshold current density Jth as low as 290A/cm2 and slope efficiency as high as 0.68W/A per facet were obtained for uncoated laser chips at 25°C. After 857 hours burn-in at 47A (corresponding to around 47W) at room temperature, power degradation rate was measured to be less than 3×10−6/h.
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- Copyright © Materials Research Society 2004