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A Self-Aligned Silicide Technology using Ion-Beam Mixing, Doped Silicide, and Rapid Thermal Processing

Published online by Cambridge University Press:  25 February 2011

Y. H. Ku ,
S. K. Lee ,
D. L. Kwong  and
P. Chu
Y. H. Ku
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
S. K. Lee
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
D. L. Kwong
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
P. Chu
Affiliation:
Charles Evans & Associates, Redwood City, CA 94063
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Abstract

A SALICIDE process is described in this paper, in which ion-beam mixing is used for silicide formation, and doped silicide in conjunction with RTA drive-in are used for shallow silicided junction formation. Fundamental issues related to this process have been investigated, including (i) effects of ion-beam mixing and RTA on the properties of Ti SALICIDE and the interaction between Ti and SiO2; (ii) the self-aligned TiNxOy TiSi2 contact barrier formation and phase transformation; (iii) the mechanism of impurity rediWstrbution and segregation, and junction formation during RTA drive-in; and (iv) the performances and reliability of fabricated SALICIDE devices. Results show that this process may have a great impact on future VLSI technology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 249
Copyright
Copyright © Materials Research Society 1989

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References

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