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Single-Shot Excimer-Laser Crystallization of an Ultra-Large Si Thin-Film Disk
Published online by Cambridge University Press: 14 March 2011
Abstract
An excimer-laser-induced large-grain growth method has been proposed which utilizes non-uniform heat diffusion along the Si thin-film and also along the underlayer. A single-shot of KrF excimer-laser light pulse with uniform intensity could crystallize a circularly pre-patterned Si thin-film of 20νm in diameter, much larger than TFT feature size in present AM-LCD panels.
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- Copyright © Materials Research Society 2000