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Spectroscopic Study of Rare Earth Doped Nano-Crystalline Silicon in Sio2 Films

Published online by Cambridge University Press:  11 February 2011

C. Rozo ,
L. F. Fonseca ,
O. Resto  and
S. Z. Weisz
C. Rozo
Affiliation:
Physics Department, University of Puerto Rico at Rio Piedras, San Juan, PR, USA
L. F. Fonseca
Affiliation:
Physics Department, University of Puerto Rico at Rio Piedras, San Juan, PR, USA
O. Resto
Affiliation:
Physics Department, University of Puerto Rico at Rio Piedras, San Juan, PR, USA
S. Z. Weisz
Affiliation:
Physics Department, University of Puerto Rico at Rio Piedras, San Juan, PR, USA
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Abstract

Si-rich SiO2, Nd-doped Si-rich SiO2 and Nd-doped SiO2 thin films were prepared. Photoluminescence (PL) spectra for visible and infrared were obtained for each as-deposited film. The samples were annealed by steps to different temperatures within the range 600°C-1100°C for 30 minutes at each annealing temperature. PL spectra were obtained at each step and their characteristics were studied. The best annealing temperature for the PL of the rare earth (RE) ions was obtained. The PL spectra of the films were compared with one another. Energy transfer from the silicon nanocrystals (Si nc) to the RE ions is verified using excitation wavelength and excitation power spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , F3.46
Copyright
Copyright © Materials Research Society 2003

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References

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