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Strain in Coherent Ge Quantum Islands on Si Measured by Transmission Electron Microscopy
Published online by Cambridge University Press: 10 February 2011
Abstract
We describe a quantitative method for measuring the strain in small islands, and show results for coherent Ge islands on Si. The method uses dark field images from backside thinned samples in the transmission electron microscope. We show that no independent strain models are needed in the measurement, which employs an excellent “abrupt displacement” approximation. Results show that the strain in Ge domes is higher than in pyramids as expected.
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- Research Article
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- Copyright © Materials Research Society 2000
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