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Strain-Field Induced Crosshatch Formation During Molecular Beam Epitaxy of InGaAs/GaAs Films

  • X. C. Zhou (a1) (a2), J. Jiang (a2) (a3), A. Y. Du (a3), J. W. Zhao (a2) (a3), S. M. Mu (a2), L.-M. Peng (a3) and Z. T. Zhong (a2)...
Abstract
Abstract

Using reflection electron microscopy (REM), transmission electron microscopy (TEM), and Nomarski optical microscopy we obtained direct evidence that local surface strain-fields, originated from misfit dislocations, are responsible for the formation of morphological crosshatches during molecular beam epitaxy of lattice mismatched InGaAs/GaAs layers. A mechanism is proposed to correlate the formation of the crosshatched patterns with the variation of the growth rate across the epitaxial surface under the perturbation of network shaped strain-fields in the surface.

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