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Stress Gradient and Relaxation Measurements in Al and Oxygen-Implanted al Films.

Published online by Cambridge University Press:  21 February 2011

Paul R. Besser ,
Stefan Bader ,
Ramnath Venkatraman  and
John C. Bravman
Paul R. Besser
Affiliation:
Materials Science and Engineering Department, Stanford University, Stanford, CA
Stefan Bader
Affiliation:
Max-Planck-Institut für Werkstoffwissenschaft, Stuttgart, Germany
Ramnath Venkatraman
Affiliation:
Technology Products, IBM Corporation, 1701 North St., Endicott, NY
John C. Bravman
Affiliation:
Materials Science and Engineering Department, Stanford University, Stanford, CA
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Abstract

Synchrotron radiation has been used in the grazing incidence geometry to determine the stress gradients and stress relaxation in 0.6 μm thick Al uniform films. We have examined both pure Al and Al implanted with 3 at% oxygen. The films were cycled between 23°C and 400°C. The surface of the pure Al films was more highly stressed, on average, than the film as a whole, both in tension and in compression. In contrast, the surface of the oxygen-implanted film was relaxed relative to the average film stress in compression but was more stressed in tension. The larger gradient in stress in the implanted films reduces during subsequent thermal cycling. These differences are attributed to the microstructures of the films. The 0-implanted film develops a small, non-columnar grain structure and forms small AI2O3 particles during annealing. The small grain size allows diffusional relaxation to occur in compression, relieving the stress in areas close to the film surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 255
Copyright
Copyright © Materials Research Society 1993

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