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Structural and Spectroscopic Study of Manganese Silicide Islands on Silicon

  • Miyoko Tanaka (a1), Qi Zhang (a1), Masaki Takeguchi (a1) and Kazuo Furuya (a1)
Abstract
Abstract

The Mn deposited clean Si (111) substrates were examined with UHV-TEM and STM that are part of an UHV-TEM/STM integrated characterization system. The Mn deposition with coverages of 5-20 ML followed by annealing at 673 K formed MnSi islands with Moire fringes. They showed metallic character. Subsequent annealing at 873 K dissipated the islands instead of transforming them into MnSi1.7. The re-deposition of Mn and re-annealing at 473 K succeeded to transform MnSi islands into MnSi1.7. The islands had several orientation relationships with substrate Si, and were semiconducting. The growth mechanism of MnSi1.7 is inferred.

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References
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MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
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