Skip to main content

Structural and Spectroscopic Study of Manganese Silicide Islands on Silicon

  • Miyoko Tanaka (a1), Qi Zhang (a1), Masaki Takeguchi (a1) and Kazuo Furuya (a1)

The Mn deposited clean Si (111) substrates were examined with UHV-TEM and STM that are part of an UHV-TEM/STM integrated characterization system. The Mn deposition with coverages of 5-20 ML followed by annealing at 673 K formed MnSi islands with Moire fringes. They showed metallic character. Subsequent annealing at 873 K dissipated the islands instead of transforming them into MnSi1.7. The re-deposition of Mn and re-annealing at 473 K succeeded to transform MnSi islands into MnSi1.7. The islands had several orientation relationships with substrate Si, and were semiconducting. The growth mechanism of MnSi1.7 is inferred.

Hide All
1.Murarka S. P., Silicides for VLSI applications (Academic press, New York 1983)
2.Rubloff G. W., Surf. Sci. 132, 268 (1983)
3.Borisenko V. E., Semiconducting Silicides (Springer, Berlin 2000).
4.Bost M. C. and Mahan J. E., J. Appl. Phys., 64 (1998) 2034
5.Dimitrdis C. A., Wener J. H., Logothetisdis S., Stutzmann M., Weber J. and Nesper R., J. Appl. Phys., 68 (1990) 1726.
6.Gerthsen D., Radermacher K., Dieker Ch. and Manti S., J. Appl. Phys., 71 (1992)
7.Bost M.C. and Mahan J.E., J.Electr.Mater., 16 (1987) 389
8.Sundström K. E., Petersson S. and Tove P. A., Phys. Status. Solidi A, 20 (1973) 653
9.Wang J., Hiraki M., Kusaka M. and Iwami M., Appl. Surf. Sci., 113/114 (1997) 53
10.Eizenberg M. and Tu K. N., J. Appl. Phys., 53 (1982) 6885
11.Zhang L. and Ivey D. G., J. Mater. Res., 6 (1991) 1518
12.Zhang Q., Takeguchi M., Tanaka M. and Furuya K., J. Cryst. Growth, to be published.
13.Tanaka M., Takeguchi M., Yasuda H. and Furuya K., J. Electron Microsc. to be published.
14.Villars P. and Calvert L. D., Person's Handbook of Crystallographic Data for Intermetallic Phases Vol.3, (American Society for Metals, USA, 1985), pp27352737
15.Kawasumi I., Sakata M., Nishida I. and Masumoto K., J. Mater. Sci. 16 (1981) 355
16.Zhang Q., Takeguchi M., Tanaka M. and Furuya K., in preparation.
17.Lian Y. C. and Chen L. J., Appl. Phys. Lett., 48, 359 (1986)
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
Please enter your name
Please enter a valid email address
Who would you like to send this to? *


Full text views

Total number of HTML views: 0
Total number of PDF views: 3 *
Loading metrics...

Abstract views

Total abstract views: 41 *
Loading metrics...

* Views captured on Cambridge Core between September 2016 - 18th November 2017. This data will be updated every 24 hours.