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Surface Layer Formation During the Chemical Mechanical Polishing of Copper Thin Films

  • J.M. Steigerwald (a1), S.P. Murarka (a1), D.J. Duquette (a1) and R.J. Gutmann (a1)

Three chemical processes that occur during the chemical mechanical polishing (CMP) of copper are described in terms of their effect on surface planarity, polish rate, and corrosion resistance of the polished copper. These processes are surface layer formation, dissolution of mechanically abraded copper, and chemical acceleration of the polish rate. The role of these processes is demonstrated with two slurry formulations used in the CMP of copper at Rensselaer.

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  • EISSN: 1946-4274
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