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Surface Photovoltage Monitoring of Silicon Surface Native and Chemical Oxides following Wafer Cleaning and Rinsing Operations
Published online by Cambridge University Press: 15 February 2011
Abstract
We report on the use of the Surface PhotoVoltage (SPV) technique to monitor the Si surface bonding arrangement, and the impurity metallic contamination level prior to critical diffusion processes via the indirect measurement of surface charge and diffusion length, respectively. We show that the effectiveness of the pre-diffusion wet chemical cleaning and rinsing sequences can be accurately monitored via the real-time, nondestructive SPV measurement. In particular the nature of the surface passivation/chemical oxide formed during the cleaning and rinsing operations can be monitored by quantitative surface charge measurements. The importance of the prior wafer history is highlighted, as is the role of the Si starting material and measurement parameters.
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- Copyright © Materials Research Society 1995
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