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Surface Studies of Laser Annealed Semiconductors

Published online by Cambridge University Press:  15 February 2011

D. M. Zehner  and
C. W. White
D. M. Zehner
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
C. W. White
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
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Abstract

The surface regions of semiconductor single crystals have been examined following laserannealing in an ultrahigh vacuum environment with the output of a pulsed ruby laser. Atomically clean surfaces with impurity levels below 0.1% of a monolayer can be produced by multiple pulse irradiation. Ordered surface structures are produced on low index oriented crystals as well as crystals slightly misoriented. Metastable surface structures exhibiting (l×1) LEED patterns have been produced on (111) orientations and are believed to be a consequence of the rapid cooling rates of 109 degs/sec achieved with the laser irradiation process. The surface and subsurface regions of ion-implanted Si crystals have been examined both before and after laser irradiation and results obtained from Si samples implanted with As are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 317
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

Research sponsored by the Division of Materials Sciences, U. S. Department of Energy under contract W-7405-eng-26 with Union Carbide Corporation.

References

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