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Surface Studies Relevant to the Initial Stages of Diamond Nucleation
Published online by Cambridge University Press: 21 February 2011
Abstract
Studies of diamond heteroepitaxy on silicon indicate that C-C surface species act as nucleation precursors. We have investigated the conversion of the Si(100) 2×1 surface to SiC using C2H4 to obtain an understanding of how C-C species may be formed and to determine the effect of an O-adlayer on enhancing or selecting the reaction channel which leads to these species. Under appropriate conditions, the interaction between C2H4 and the clean silicon surface yields both SiC and C-C species. The presence of an O-adlayer significantly reduces the activity of silicon and enhances the formation of sp2 and sp3 C-C species. These results provide key insights into diamond nucleation conditions in conventional growth processes.
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- Copyright © Materials Research Society 1994
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