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Thermoelectric Properties of Half-Heusler Compounds N-type MNiSn and P-type MPtSn (M = Hf, Zr)
Published online by Cambridge University Press: 26 February 2011
Abstract
To design and to develop Half-Heusler based high-temperature thermoelectric materials, thermoelectric properties of n-type MNiSn and p-type MPtSn (M = Hf, Zr) were investigated based on two respective strategies. For the n-type (Hf, Zr)NiSn, a combined process of optical floating zone melting and hot-pressing was applied aiming to reduce thermal conduction through the lattice contribution. For the p-type HfPtSn, power factor and hence figure of merit ZT were dramatically improved by the p-type doping of Ir and Co targeting for Pt-site, which effectively lower electrical resistivity. The additions of Ir and Co are expected not only to increase carrier concentration but also to suppress the lattice thermal conduction by substituting for Pt.
- Type
- Research Article
- Information
- MRS Online Proceedings Library (OPL) , Volume 980: Symposium II – Advanced Intermetallic-Based Alloys , 2006 , 0980-II04-03
- Copyright
- Copyright © Materials Research Society 2007
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