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Time-Resolved Ellipsometry and Reflectivity Measurements of the Optical Properties of Silicon During Pulsed Excimer Laser Irradiation*

  • G. E. Jellison (a1) and D. H. Lowndes (a1)
Abstract

Several advances in time-resolved optical measurement techniques have been made, which allow a more detailed determination of the optical properties of silicon immediately before, during, and after pulsed laser irradiation. It is now possible to follow in detail the time-resolved reflectivity signal near the melting threshold; measurements indicate that melting occurs in a spatially inhomogeneous way. The use of time-resolved ellipsometry allowed us to accurately measure the optical properties of the high reflectivity (molten) phase, and of the hot, solid silicon before and after the laser pulse. We obtain n = 3.8, k = 5.2 (±10.1) at λ = 632.8 nm for the high reflectivity phase, in minor disagreement with the published values of Shvarev et al. for liquid silicon. Before and after the high reflectivity phase, the time-resolved ellipsometry measurements are entirely consistent with the known optical properties of crystalline silicon at temperatures up to its melting point.

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Research sponsored by the Division of Materials Sciences, U. S. Department of Energy under contract DE-ACO5-840R21400 with Martin Marietta Energy Systems, Inc.

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1. Auston, D. H., Surko, C. M., Venkatesan, T. N. C., Slusher, R. E., and Golovchenko, J. A., Appl. Phys. Lett. 33, 437 (1978).
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MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
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