Hostname: page-component-7bb8b95d7b-2h6rp Total loading time: 0 Render date: 2024-09-23T10:03:32.645Z Has data issue: false hasContentIssue false
  • English
  • Français

Zirconium Nitride Films formed by Dynamic Ion Implantation

Published online by Cambridge University Press:  25 February 2011

I. C. Oppenheim  and
K.R. Padmanabhan
I. C. Oppenheim
Affiliation:
Materials Science and Engineering, The Johns Hopkins University, Baltimore, MD 21218
K.R. Padmanabhan
Affiliation:
Department of Physics and Astronomy, Wayne State University, Detroit, MI 48202
Get access

Abstract

RF sputter deposition of 500 nm thick zirconium films was carried on simultaneously with implantation of singly ionized molecular nitrogen. Samples were prepared at room temperature (23°C) with a nitrogen to zirconium arrival ratio varying from 2.7x10-2 to 4.4x10-1 and with the ion energy varying from 100 to 300 keV.

Stoichiometry of the films and ion concentration profiles were determined by Rutherford Backscattering Spectrometry. Results from a theoretical model for the ion concentration profiles were compared to profiles derived from experiments. Grazing Angle X-Ray Diffraction was used to correlate nitride phase formation to processing parameters.

Knoop microhardnesses of films deposited on 304 stainless steel substrates were determined. The relative microhardness of the samples were studied as a function of parameters such as film stoichiometry and ion implantation energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 37
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Tomita, T., Kasai, I., and Koshiki, T., Jpn. Patent A 7630525 (1971).Google Scholar
2 Hintermann, H.E., Thin Solid Films 84,215 (1981).Google Scholar
3 Oppenheim, I.C., Ph.D. Dissertation, Wayne State University (1988).Google Scholar
4 Handbook of Ion Beam Processing Technology, Edited by Cuomo, J. J., Rossnagel, S. M., and Kaufman, H.R., p. 194 (1989).Google Scholar
5 Colligon, J.S., Fischer, G., and Patel, M.H., J. Mat. Sci. (Lett) 12, 829 (1977).Google Scholar
6 Seemann, H., Ann. Physik, 59, 455 (1919).Google Scholar
7 Bohlin, H., Ann. Physik, 61, 421 (1920).Google Scholar
8 Eskildsen, S.S., “Ion Implantation into Metals”, Proc. Conf. on “Modification of the Surface Properties of Metals by Ion Implantation”, Manchester, U.K., June 23-26,1981. V.Ashworth, W.A. Grant, and R.P.M. Procter, Editors, Pergamon, Oxford, pp 315-327 (1982).Google Scholar
9 Eskildsen, S.S., “Description of the Arhus RBS Facility”, Institute of Physics, University of Arhus Rep. (1986).Google Scholar
10 Harper, J.M.E., Cuomo, J.J., and Hentzell, H.T.G., Appl. Phys. Lett. 43 (6), 547 (1983).Google Scholar