Gd2O3 and HfO2 films exhibit photovoltaic charging that depends on temperature. The dielectric properties of the surface and concomitant photovoltaic surface charging increases following oxygen exposure under ultrahigh vacuum conditions suggesting that the surface conductivity plays a role in the surface photovoltage charging.

Development of highly efficient mercury free fluorescent lamps and plasma display panels has been a challenging task due to the need for a combination of phosphor properties that are difficult to obtain in a single material (high efficiency, short emission lifetime and weak sensitivity to aging process under VUV excitation). Quantum cutting mechanism is a way to improve the fluorescence efficacy. Here we describe quantum cutting involving pairs of Tm3+ ions in KY3F10. Efficient excitation in the vacuum UV is initiated to the 5d state of Tm3+. This is followed by a cross relaxation energy transfer (CRET) involving the excited ion in the 5d state and nearby Tm3+ in the ground state, producing a pair of Tm3+ in excited states of the 4f13 configuration. Both ions can then emit photons. The excitation and reflection spectra are studied as a function of Tm3+ concentration and temperature. An unusual enhancement of the reflectivity at excitation wavelengths corresponding to the Tm3+ 5d absorption peaks is shown to arise from strong 5d→4f emission which is confirmed from the VUV emission spectra. The strong reduction of the integrated 5d emission intensity and shortening of its lifetime with Tm3+ concentration indicates the effective presence of the desired CRET process that is required for the first step of the quantum cutting. High Tm3+ concentrations are required for efficient quantum cutting. Whereas the CRET from the 5d state is estimated to be quite efficient, the 4f13 states of Tm3+ also undergo a strong CRET and therefore, emission from the 4f13 excited states that are created from the first step are strongly quenched at high Tm3+ concentrations. As a result, quantum yields greater than unity are not achieved.

The magnetic characteristics of the dilute magnetic system GaGdN are investigated by mainly soft-X-ray magnetic circular dichroism (MCD) in energy range of 1160 – 1240 eV. The strong MCD signals up to 30 % at 15K are observed. The temperature dependence of its intensity is not on simple Curie-Weiss curve and depicts three-step curve. A step around 40 – 100K suggests a new magnetic phase. The luminescence spectrum of GaGdN at low temperature is divided into three parts consisting of two broad bands around 432 nm and 503 nm and a sharp peak at 652 nm. This sharp line is assigned to the intra-transition of f – f orbital owing to the weak temperature dependence of the intensity and peak position. AlGdN grown by molecular beam epitaxy produces luminescence at 318.5 nm. X-ray absorption fine structure is examined to survey the occupancy of the Gd ion in the grown specimens.

Cathodoluminescence (CL) of rare earth (RE) ions implanted AlN/GaN superlattice (SL) structures grown by chemical vapor deposition (CVD) technique on GaN/(0001) sapphire substrate was measured at 10 K and 300 K. Implantation of terbium and thulium in SLs was done at 150 keV with a dose of up to 1×1015 cm-2 at 300 K. Samples were given post implantation isochronal thermal treatment at 900 °C in nitrogen ambient. The interface quality between the SL layers before and after implantation as well as after thermal annealing treatment has been investigated by X-ray diffraction (XRD). The characteristic satellite peaks of the SLs were measured for the (0002) reflection in the symmetric Bragg geometry for the reference, RE-implanted, and annealed SLs. Furthermore, the luminescence intensity of a RE3+ ion doped AlN/GaN SL was compared with the one from RE-implanted GaN epilayers. Despite the structural damage of the AlN/GaN structures, an enhancement of the characteristic emission intensities from RE3+ ions in the SLs was observed compared to emission from RE ions in epilayers.

The scheelite type laser crystals LiREF4 melt congruently only for RE being one of the elements Er, Tm, Yb, Lu, or possibly Y, respectively. For RE = Eu, Gd, Tb, Dy, or Ho the corresponding scheelites undergo a peritectic melting under the formation of the corresponding rare earth fluoride. The melting behavior of LiREF4 mixed crystals with two or more RE is not yet known well. If RE is a mixture of Gd and Lu, Gd rich solid solutions melt peritectically under formation of (Gd,Lu)F3 and Lu rich solid solutions melt directly without formation of other solid phases.

We report on the optical properties of Ho doped KPb2Cl5 (Ho: KPC) for potential applications as an infrared (IR) solid-state gain medium. The investigated crystal was synthesized from commercial starting materials of PbCl2, KCl, and HoCl3 followed by several purification steps including directional freezing, zone-refinement, and chlorination. The Ho: KPC crystal was subsequently grown by Bridgman technique. Following optical excitation at 885 nm, several IR emission bands were observed at room-temperature with average wavelengths at 1.07, 1.18, 1.35, 1.65, 2.00, 2.94, and 3.96 μm. The emission at 3.96 μm originated from the 5I5 -> 5I6 transitions of Ho3+ and was further evaluated for possible applications in mid-IR lasers. The decay time of the 5I5 excited state was measured to be 5.0 ms at room-temperature. The long 5I5 lifetime is favorable for laser applications and indicates that non-radiative multi-phonon relaxations are small in Ho: KPC. Based on a Judd-Ofelt analysis, the emission quantum efficiency was determined to be near unity resulting in a peak emission cross-section of 0.62×10-20 cm2 at 3.96 μm. A drawback for laser applications is the long decay time of the lower 5I6 state with a value of 4.8 ms . Since the 3.96 μm transition terminates in the 5I6 level, its long lifetime will lead to population bottlenecking, which limits possible mid-IR lasing to pulsed and quasi-cw operation.

AlxGa1- xN/GaN high electron mobility transistor (HEMT) structures grown by ammonia-source molecular beam epitaxy (MBE) are focused-ion-beam implanted with 300 keV Gd-ions at room temperature. The two-dimensional electron gas (2DEG) of these HEMT structures is located 27 nm underneath the sample surface. At 4.2 K, current-voltage characteristics across implanted rectangles show that the structures remain conducting up to a Gd-dose of 1×1012 cm-2. Anomalous Hall effect (AHE) is observed at T = 4.2 K for structures implanted with Gd, whose dose is 3×1011 cm-2. Measurements of AHE in the wide temperature range from 2.4 K to 300 K show that the magnetic ordering temperature of these structures is around 100 K. Therefore, these Gd-implanted HEMT structures containing the still conducting 2DEG, which is now embedded in a ferromagnetic semiconductor, open the possibility to polarize the electron spins.

Using cathodoluminescence measurements, we studied the excitation of rare earth ions in LiNbO3 and compare it with previously studied Eu ions in GaN. We find that in both hosts and all dopants the most efficient excitation pathways involves a defect traps that capture the energy from the electron-hole pairs created in the host by E-beam irradiation. Even then the excitation efficiency in LiNbO3 is very low. Moreover, only a small fraction (<10-4) of the RE ions that are optically active can be excited through this pathway. We explain this behavior by a negligible direct excitation and a strong dependence of the excitation efficiency on the distance between the defect trap and the rare earth ion. The density of the defect traps is small such that many rare earth ions are far away from traps.

We provide an investigation of in situ doping of GaN with the RE element Nd by plasma assisted-molecular beam epitaxy (PA-MBE). GaN epilayers are grown on c-plane sapphire and free standing GaN substrates and the Nd doping is controlled by an effusion cell. The ideal growth conditions for Nd incorporation maintaining crystal quality in GaN were investigated. The optical absorption characteristics indicate that the GaN:Nd epilayer remains transparent at the Nd emission wavelength of interest. For the highest Nd effusion cell temperatures, Rutherford backscattering and secondary ion mass spectrometry data indicate ˜5 at. % in epilayers grown on c-plane sapphire. X-ray diffraction found no evidence of phase segregation up to ˜1 at. % Nd. The highest luminescence intensities correspond to a doping range 0.05-1 at. %, with the strongest emission occurring at 1.12 eV (1107 nm). We also present the Stark energy sublevels of Nd3+ ions in GaN as determined by luminescence spectra. Photoluminescence excitation spectra reveal an optimal excitation energy of 1.48 eV (836 nm). We correlate the photoluminescence spectra with transitions from the 4F3/2 excited state to the 4I9/2, 4I11/2, and 4I13/2 multiplets of the Nd3+ ion for above (325nm) and below (836nm) bandgap excitation. Spectral correlation of the Nd emission multiplets in addition to site-selective spectroscopy studies using combined excitation-emission spectroscopy with confocal microscopy indicate enhanced substantial doping at the Ga site compared to other techniques (ion implantation and co-sputtering).

Due to its favorable electronic and thermal properties GaN has been considered as a rare-earth host material for solid state amplifier and laser applications. To this end, we performed spatially resolved combined excitation emission spectroscopy (CEES) on Nd ions which were in-situ-doped into GaN epitaxial films grown by plasma assisted molecular beam epitaxy (PA-MBE) on c-plane sapphire substrate. For a wide range of concentration (up to 8at%) we find in the emission a dominant incorporation site, which can be identified with good certainty as a substitutional ‘Ga’ site. Energy levels and electron-phonon coupling to a localized mode can be identified. For the majority site, confocal spectral imaging under selective excitation show changes in emission intensity, excitation and emission wavelength on a submicron length scale suggesting spatial inhomogeneities in terms of Nd3+ ion concentration.

Silicon rich silicon oxide multilayers for optical devices have been investigated by laser assisted wide angle atom probe tomography. Three dimensional mapping of silicon nanoclusters multilayers was obtained. The composition of the different phases were deduced and compared to theoretical concentration. These results evidenced a size distribution of the Si clusters diameter and an incomplete phase separation between silica and silicon particles.

We fabricated a laser diode (LD) exhibiting a lasing from strained GaInAs quantum wells (QWs) embedded in Er,O-codoped GaAs (GaAs:Er,O) by organometallic vapor phase epitaxy (OMVPE). The lasing wavelength was designed to tune to the energy separation between the second excited states 4I11/2 and the ground state 4I15/2 of Er3+ ions. The threshold current for the lasing at room temperature was six times larger than that of a GaInAs QW-LD without Er doping, reflecting ultrafast carrier capture by an Er-related trap in GaAs:Er,O. The Er intensity revealed initially steep increase with injected current density in the region for spontaneous emission from the GaInAs QWs. In the stimulated QW emission region, the intensity continued to increase with the current density.

Polycrystalline transparent Yb:Sc2O3 ceramics were obtained in the best conditions by a solid-state reaction route using high purity Sc2O3 and Yb2O3 powders with TEOS as a sintering aid. The as-prepared powders containing various ytterbium content were characterized by BET measurements, XRD and FEG-SEM. The sintering behaviour of the powders was investigated by dilatometry. The sintered materials microstructures were observed by FEG-SEM. EPMA allowed to characterize the repartition of the dopant Yb3+ in the Sc2O3 matrix.

This paper describes an investigation towards very fast emitting oxidic luminescent materials doped with Pr3+. Such materials have the potential to be applied as scintillators in Positron Emission Tomography.

Electrical and fluorescent properties of Sr-deficient strontium bismuth tantalate co-doped with excess-Bi and Eu atoms (BiEu-SBT) were investigated, in which the Eu/Bi ratio was changed between 0 and 0.1. BiEu-SBT were synthesized on Pt (200 nm)/Ti (50 nm)/SiO2/Si substrates by using Sr0.8Bi2.2Ta2O9 and Sr0.8(Bi2, Eu0.2)Ta2O9 mixed precursor solutions with a concentration of 0.33 mol/kg, in which Sr concentration was fixed at 0.8. From X-ray diffraction analysis, the diffraction peaks from Aurivillius phases were observed in the synthesized BiEu-SBT as well as in pure SBT. In BiEu-SBT, the lattice parameters along a- and c-axes at the Eu/Bi ratio of 0.1 in comparison with those of 0 decreased approximately 0.27 and 0.19 %, respectively. The remnant polarization (2Pr) values of the synthesized BiEu-SBT with Eu/Bi ratio of 0 and 0.1 were approximately 8.4 and 6.8 μC/cm2, respectively. From photoluminescence (PL) measurement at a wavelength of 615 nm as a function of Eu/Bi ratio, the PL intensity of the synthesized BiEu-SBT was proportional to the Eu/Bi ratio, whereas, the 2Pr values were slightly decreased by Eu-doping.

Indium gallium zinc oxide (IGZO) has attracted recent attention as a high electron mobility amorphous material for high performance thin film transistors and subsequent use in active matrix backplanes for flexible displays. In this study, Eu:IGZO thin films were pulsed laser deposited at room temperature onto sapphire substrates and were investigated by cathodoluminescence and optical transmission. Photoluminescence was not observed with above band gap excitation. Thin film electroluminescent (TFEL) devices were also fabricated from these thin films. The thin films and devices demonstrate characteristic europium emission, with the most intense emission at 611 nm corresponding to the 5D0 to 7F2 transition. Luminescence was observed to increase with increasing oxygen pressure during deposition of the Eu:IGZO thin films and may be related to the free carrier density in the films. The authors believe this to be the first report of an amorphous oxide electroluminescent phosphor.

We present our site-selective spectroscopic studies on Er3+ doped nearly stoichiometric lithium tantalate (LiTaO3) and compare the results with earlier studies performed on the same dopant in the isostructural lithium niobate host. We present our results in terms of the number and spectroscopic characteristics of the incorporation sites. Overall, the sites found in LiTaO3 closely resemble in their behavior the ones found in LiNbO3 such that the conclusion about the nature of the site drawn in the latter host can be transferred to LiTaO3 as well.

The extremely high scintillation efficiency of lutetium iodide doped by cerium is explained as a result of several factors controlling the energy transfer from the host matrix to activator, two of which are investigated in the present paper. The first one is the increase of the efficiency of energy transfer from self-trapped excitons to cerium ions in the row LuCl3-LuBr3-LuI3. The STE structure and the efficiency of STE to cerium energy transfer are verified by cluster ab initio calculations. We propose and theoretically validate the possibility of a new channel of energy transfer to excitons and directly to cerium, namely the Auger process when Lu 4f hole relaxes to the valence band hole with simultaneous creation of additional exciton or excitation of cerium. This process should be efficient in LuI3, and inefficient in LuCl3. In order to justify this channel we perform calculations of density of states using a periodic plane-wave density functional approach. The performed estimations theoretically justify the high LuI3:Ce3+ scintillator yield.

Using both β-diketone and malonamide organosilane derivatives and silica Si-HIPE macro-mesocellular foams (acronym refers to the High Internal Phase Emulsion process), organically modified silicates (ORMOSILs) with chelating functionality have been synthesized. The organic functionalities have been anchored to the silica porous networks by both a two-steps grafting method, relating to grafted gOrgano-Si(HIPE), and a one-step co-condensation process, relating to Organo-Si(HIPE). The loading of monoliths by lanthanides was performed by impregnation of an europium (III) salt in solution, leading to a new Eu3+@(g)Organo-Si(HIPE) hybrid foams series. The resulting materials have been thoroughly characterized via a large set of techniques such as SEM, TEM, SAXS, mercury intrusion porosimetry, nitrogen adsorption, FTIR and 29Si CP MAS NMR. Luminescence behavior of this Eu3+@Organo-Si(HIPE) series was also studied and the effects of environment and europium concentration will be discussed.

Photoluminescence activity was observed for neodymium-doped gallium oxide thin films prepared by radiofrequency magnetron co-sputtering. Structural and optical properties of as-grown and annealed films were studied and photoluminescence activity was especially investigated. The most intense lines were associated to the 4F3/2 → 4I9/2 and 4F3/2 → 4I11/2 electronic transitions of Nd3+. The effects of deposition and treatment parameters such as the substrate temperature, the post anneal treatment or the neodymium content in the films were particularly examined with the aim to reach the best luminescence efficiency.