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An Amorphous IGZO Rare Earth Doped Luminescent Phosphor

Published online by Cambridge University Press:  01 February 2011

Patrick Wellenius ,
Arun Suresh  and
John F. Muth
Patrick Wellenius
Affiliation:
pwellen@unity.ncsu.edu, NC State University, Electrical and Computer Engineering, Raleigh, United States
Arun Suresh
Affiliation:
asuresh@ncsu.edu, NC State University, Electrical and Computer Engineering, Raleigh, United States
John F. Muth
Affiliation:
muth@unity.ncsu.edu, NC State University, Electrical and Computer Engineering, Raleigh, United States
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Abstract

Indium gallium zinc oxide (IGZO) has attracted recent attention as a high electron mobility amorphous material for high performance thin film transistors and subsequent use in active matrix backplanes for flexible displays. In this study, Eu:IGZO thin films were pulsed laser deposited at room temperature onto sapphire substrates and were investigated by cathodoluminescence and optical transmission. Photoluminescence was not observed with above band gap excitation. Thin film electroluminescent (TFEL) devices were also fabricated from these thin films. The thin films and devices demonstrate characteristic europium emission, with the most intense emission at 611 nm corresponding to the 5D0 to 7F2 transition. Luminescence was observed to increase with increasing oxygen pressure during deposition of the Eu:IGZO thin films and may be related to the free carrier density in the films. The authors believe this to be the first report of an amorphous oxide electroluminescent phosphor.

Keywords

amorphousEuoxide
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1111: Symposium D – Rare-Earth Doping of Advanced Materials for Photonic Applications , 2008 , 1111-D08-03
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES

1. Suresh, A., Wellenius, P., Dhawan, A. and Muth, J. F., Appl. Phys. Lett. 90, 123512 (2007)Google Scholar
2. Nomura, K., Ohta, H., Takagi, A., Kamiya, T., Hirano, M. and Hosono, H., Nature 432, pp. 488–492 (2004)Google Scholar
3. Suresh, A., Gollakota, P., Wellenius, P., Dhawan, A. and Muth, J. F., Thin Solid Films 516, pp. 1326–1329 (2008)Google Scholar
4. Gollakota, P., “Investigation of Europium Doped Wide Band Gap Oxides and an Annealing Study of the Amorphous Oxide Semiconductor — Indium Gallium Zinc Oxide” (MS thesis, North Carolina State University, 2006)Google Scholar
5. Lozykowski, H. J., Phys. Rev. B 24, pp. 17758–17769 (1993)Google Scholar
6. Lozykowski, H. J., Alshawa, A. K. and Brown, J., J. Appl. Phys. 76, pp. 4836–4846 (1994)Google Scholar
7. Jadwisienczak, W. M. and Lozykowski, H. J., Mater. Res. Soc. Symp. Proc. 482, pp. 1033–1038 (1998)Google Scholar
8. Munasinghe, C. and Steckl, A. J., Thin Solid Films 496, pp. 636–642 (2005)Google Scholar