We report the use of Raman spectroscopy to characterize the bending stresses in a deep reactive-ion etched, single-crystal, silicon flexure of length 2950 μm, width 480 μm, thickness 150 μm, and fillet radius 65 μm, subjected to a tip displacement of 69.5 μm. The spectral resolution of the measurement was 0.02 cm-1, which corresponds to a stress resolution of ∼10 MPa, and the spatial resolution was ∼1 μm. Line scans were performed across the thickness, at several locations along the length, of the flexure. The changes in the Raman shift were converted to stress values, assuming a uniaxial stress state, without the use of any fitting parameters. A comparison of the measured values with the predictions of analytical and numerical models indicates agreement to within 25–35 MPa (or ∼15%) at locations sufficiently distant from the root. At the root itself, the complex nature of the stress distribution precludes unambiguous stress determination using spectroscopic measurements.