In this work, sulfurizing metal precursors prepared by magnetron sputtering was applied in Cu2ZnSnS4 (CZTS) thin film fabrication. Three precursor structures, namely substrate/ Zn/(Cu&Sn), substrate/Zn/Cu/Sn/Cu and substrate/Zn/Sn/Cu, were compared for their synthesized CZTS film quality. It is notable that CZTS film made of the precursor structure of substrate/Zn/(Cu&Sn) has the best film quality with no obvious voids and biggest average grain size. When applying this precursor structure into device fabrication, a working CZTS device with an efficiency of 2.26% was made. The impact of metal precursors on the structural property of CZTS film were characterised by SEM, XRD, Raman and TEM. Thick MoS2 interfacial layer (∼200nm) between absorber and back Mo contact and ZnS formed in the front and back absorber regions are the possible reasons limiting short-circuit current and fill factor of the cell.