Modulus mapping using nanoDMA (Dynamic Mechanical Analysis) is a recently developed technique based on a nanoindentation instrument equipped with an AFM-like piezoscanner and dynamic force modulation system. The surface properties, storage and loss moduli are quantified based on the Hertz model for the contact mechanics of the sample-tip configuration. In this approach, the applied load, topography features, and their size may have a pronounced effect on the obtained results. In order to demonstrate that, internal interfaces of deep sea sponge (Monorhaphis chuni), which comprises alternating layers of relatively thick (4 μm in average) biosilica and thin (60 nm) organic material, were characterized using the nanoDMA modulus mapping technique. Experimental data were analyzed in tight interrelation with finite element simulations. This combination allowed us to evaluate elastic modulus of a 60 nm wide organic layers in M. chuni.

When an electrocatalyst, platinum, was coated on ionic-polymer gel surfaces and was immersed into an acidic formaldehyde solution, an input dc current will produce oscillatory ac on the surfaces of the ionic-polymer-metal-composites(IPMC), which eventually causes self-oscillatory bending of the actuators. Typical IPMC actuators have a large length-to-height ratio, exhibiting large deformation during bending and relaxation processes. A multiphysics modeling of self-oscillations of IPMC actuator was carried out, incorporating the electrochemical oscillations, electrokinetics, electrostatics and nonlinear large deformation of the actuators.

Ferroelectric field effect transistor (FFET) is a promising candidate for non-volatile random access memory because of its high speed, single device structure, low power consumption, and nondestructive read-out operation. Currently, however, such ideal devices are commercially not available due to poor interface properties between ferroelectric film and Si substrate, such as leakage current and interdiffusion etc. So we choose YSZ and HfO2 insulating thin films as buffer layer due to they possess relatively high dielectric constant, high thermal stability, low leakage current, and good interface property with Si substrates. Two structural diodes of Pt/BNT/YSZ/Si and Pt/SBT/HfO2/Si were fabricated, and the microstructures, interface properties, C-V, I-V, and retention properties were investigated in detail. Experimental results show that the fabricated diodes exhibit excellent long-term retention properties, which is due to the good interface and the low leakage density, demonstrating that the YSZ and HfO2 buffer layers are playing a critical modulation role between the ferroelectric thin film and Si substrate.