Skip to main content
    • Aa
    • Aa
  • Get access
    Check if you have access via personal or institutional login
  • Cited by 8
  • Cited by
    This article has been cited by the following publications. This list is generated based on data provided by CrossRef.

    Fouad, S.S. Sakr, G.B. Yahia, I.S. Abdel-Basset, D.M. and Yakuphanoglu, F. 2014. Capacitance and conductance characterization of nano-ZnGa2Te4/n-Si diode. Materials Research Bulletin, Vol. 49, p. 369.

    Xu, Huijuan Wang, Xunsi Nie, Qiuhua He, Yuju Zhang, Peiquan Xu, Tiefeng Dai, Shixun and Zhang, Xianghua 2014. Glass formation and properties of Ge–Ga–Te–ZnI2 far infrared chalcohalide glasses. Journal of Non-Crystalline Solids, Vol. 383, p. 212.

    Errandonea, D. Kumar, R. S. Gomis, O. Manjón, F. J. Ursaki, V. V. and Tiginyanu, I. M. 2013. X-ray diffraction study on pressure-induced phase transformations and the equation of state of ZnGa2Te4. Journal of Applied Physics, Vol. 114, Issue. 23, p. 233507.

    Fouad, S.S. Sakr, G.B. Yahia, I.S. Abdel-Basset, D.M. and Yakuphanoglu, F. 2013. Impedance spectroscopy of p-ZnGa2Te4/n-Si nano-HJD. Physica B: Condensed Matter, Vol. 415, p. 82.

    Sakr, G. B. Fouad, S. S. Yahia, I. S. and Abdel Basset, D. M. 2013. Memory switching of ZnGa2Te4 thin films. Journal of Materials Science, Vol. 48, Issue. 3, p. 1134.

    Sakr, G.B. Fouad, S.S. Yahia, I.S. Abdel Basset, D.M. and Yakuphanoglu, F. 2013. Nano-crystalline p-ZnGa2Te4/n-Si as a new heterojunction diode. Materials Research Bulletin, Vol. 48, Issue. 2, p. 752.

    Fouad, S.S. Sakr, G.B. Yahia, I.S. and Basset, D.M. Abdel 2011. Structural characterization and novel optical properties of defect chalcopyrite ZnGa2Te4 thin films. Materials Research Bulletin, Vol. 46, Issue. 11, p. 2141.

    Rashmi, 2003. X-ray powder diffraction study of defect-tetrahedral structure quaternary compound CuZnGa3Te6. Powder Diffraction, Vol. 18, Issue. 03, p. 263.


X-ray powder diffraction study of ZnGa2Te4

  • undefined Rashmi (a1) and U. Dhawan (a1)
  • DOI:
  • Published online: 05 March 2012

ZnGa2Te4 was found to crystallize in a defect tetrahedral structure with possible space group I4(82) with Z=2. Complete X-ray powder diffraction data were obtained and the unit cell parameters a and c and X-ray density were calculated. These were a=0.5930(1) nm, c=1.1859(3) nm, and Dx=5.7×103 kg/m3.

Corresponding author
a)Electronic mail:
b)Retired scientist, National Physical Laboratory, New Delhi.
Linked references
Hide All

This list contains references from the content that can be linked to their source. For a full set of references and notes please see the PDF or HTML where available.

J. C. Woolley , and B. Ray (1960). “Effects of solid solution of Ga2Te3 with AIIBVI tellurides,” J. Phys. Chem. Solids JPCSAW 16, 102106. jpx, JPCSAW 0022-3697

P. M. de Wolff (1968). “A simplified criterion for the reliability of a powder pattern indexing,” J. Appl. Crystallogr. JACGAR 1, 108113. acr, JACGAR 0021-8898

G. S. Smith , and R. L. Snyder (1979). “FN: A criterion for rating powder diffraction patterns and evaluating the reliability of powder-pattern indexing,” J. Appl. Crystallogr. JACGAR 12, 6065. acr, JACGAR 0021-8898

C. K. Lowe-Ma , and T. A. Vanderah (1991). “Structure of ZnGa2S4, a defect sphalerite derivative,” Acta. Crystallogr. Sect. C: Cryst. Struct. Commun. ACSCEE 47, 919924. acg, ACSCEE 0108-2701

T. Okamoto , T. Miyashita , A. Yamada , M. Konagai , and K. Takahashi (1994). “Formation of ZnGa2Se4 epitaxial layer during molecular beam epitaxial growth of Ga2Se3 on ZnSe,” Jpn. J. Appl. Phys., Part 2 JAPLD8 33, L1059L1062. jjc, JAPLD8 0021-4922

Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

Powder Diffraction
  • ISSN: 0885-7156
  • EISSN: 1945-7413
  • URL: /core/journals/powder-diffraction
Please enter your name
Please enter a valid email address
Who would you like to send this to? *