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Whither Oxide Electronics?

Published online by Cambridge University Press:  31 January 2011

Ramamoorthy Ramesh  and
Darrell G. Schlom

Abstract

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In this issue we have endeavored to answer the question, “Whither oxide electronics?” This issue provides a framework and perspective on the progress in the field of oxide electronics over the past several decades, as well as the challenges and opportunities in the years to come. Building on the foundations laid by the pioneers in the materials community and spurred by the discovery of high-temperature superconductivity, there has been both tremendous progress in understanding the complex science of oxide electronic materials and the discovery of other fascinating new phenomena, including colossal magnetoresistance, multiferrocity, and two-dimensional electron gases in correlated oxide systems. Thin-film heterostructures provide a pathway to create novel devices and combinations of physical phenomena. Indeed, the ability to synthesize and control oxide heterostructures using sophisticated deposition techniques has become a key enabler of the recent advances in this field. These oxides are beginning to enter mainstream products because of their higher performance, for example, ferroelectric memories and oxides with high dielectric constant for computers that run at higher speed and use less power.

Type
Research Article
Information
MRS Bulletin , Volume 33 , Issue 11: Whither Oxide Electronics? , November 2008 , pp. 1006 - 1014
Copyright
Copyright © Materials Research Society 2008

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