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Highly Conductive In4Sn3O12 Films Prepared by Pulsed Laser Deposition

Published online by Cambridge University Press:  01 February 2011

David H O'Neil ,
Vladimir Kuznetsov ,
Robert Jacobs ,
Martin O Jones  and
Peter P Edwards
David H O'Neil
Affiliation:
david.oneil@chem.ox.ac.uk, University of Oxford, Inorganic Chemistry, South Parks Road, Oxford, OX1 3QR, United Kingdom, +44 1865 272643
Vladimir Kuznetsov
Affiliation:
vladimir.kuznetsov@chem.ox.ac.uk, University of Oxford, Inorganic Chemistry, South Parks Road, Oxford, OX1 3RQ, United Kingdom
Robert Jacobs
Affiliation:
robert.jacobs@chem.ox.ac.uk, University of Oxford, Surface Analysis Facility, Chemistry Research Laboratory, 12 Mansfield Road, Oxford, OX1 3TA, United Kingdom
Martin O Jones
Affiliation:
martin.jones@chem.ox.ac.uk, University of Oxford, Inorganic Chemistry, South Parks Road, Oxford, OX1 3RQ, United Kingdom
Peter P Edwards
Affiliation:
peter.edwards@chem.ox.ac.uk, University of Oxford, Inorganic Chemistry, South Parks Road, Oxford, OX1 3RQ, United Kingdom
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Abstract

Highly conductive (> 103 Ω-1cm-1) and transparent (∼ 90%) In4Sn3O12 films have been deposited using pulsed laser deposition (PLD) on glass substrates held at a temperature of 500°C under varying pressures of oxygen (2.5 mTorr ≤ PO2 ≤ 15 mTorr). The crystallinity and the roughness of the films were found to increase with the pressure of oxygen used during deposition. Electron concentrations of the order of 5×1020 cm-3 and mobilities as high as 30 cm2V-1s-1 were derived from the measurement of Hall coefficients. Both the electronic transport and optical properties of the films were found to be strongly sensitive to the pressure of oxygen used during deposition.

Keywords

transparent conductoroptoelectroniclaser ablation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1102: Symposium LL – Energy Harvesting–From Fundamentals to Devices , 2008 , 1102-LL01-10
Copyright
Copyright © Materials Research Society 2008

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