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2D Assemblies of Silicon Nanocrystallites Prepared by sol-gel Method from Triethoxysilane.

Published online by Cambridge University Press:  11 February 2011

Jerôme Rouquette ,
Monique Pauthe ,
Michel Ramonda ,
Thierry Taliercio ,
Bernard Gil  and
Kevin P. O'Donnell
Jerôme Rouquette
Affiliation:
Laboratoire de Physico-chimie de la Matière Condensée -, Université de Montpellier II - Case Courrier 084 – 34095 Montpellier cedex 5 -, France
Monique Pauthe
Affiliation:
Laboratoire de Physico-chimie de la Matière Condensée -, Université de Montpellier II - Case Courrier 084 – 34095 Montpellier cedex 5 -, France
Michel Ramonda
Affiliation:
Laboratoire d'Acoustique, d'Imagerie et de Nanophysique, - Université de Montpellier II - Case Courrier 082 – 34095 Montpellier cedex 5, -, France
Thierry Taliercio
Affiliation:
Groupe d'Etude des Semiconducteurs, - Université de Montpellier II - Case Courrier 074 – 34095 Montpellier cedex 5, -, France
Bernard Gil
Affiliation:
Groupe d'Etude des Semiconducteurs, - Université de Montpellier II - Case Courrier 074 – 34095 Montpellier cedex 5, -, France
Kevin P. O'Donnell
Affiliation:
University of Strathclyde – Glasgow-G4 ONG, Scotland
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Extract

The sol-gel route using triethoxysilane as a precursor has been used to prepare films of Si nanocrystallites. These films were deposited on (001)-oriented silicon substrates either by spin coating deposition of a liquid phase that was further heat-treated under static vacuum (dots embedded in silica gel) or by vapour phase from the thermal decomposition under vacuum of the dried gels (uncapped dots). We address the structural characterisation of these samples and we find that a spontaneous orientation of the crystallites is obtained for heating treatment beyond 800°C if the dots are deposited in the vapour phase. The optical properties of dots embedded in silica gel reveal a strong red-orange photoluminescence due to carrier recombination at the dot surface, which is noticeably contaminated by oxygen and hydrogen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , F3.36
Copyright
Copyright © Materials Research Society 2003

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References

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