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Electroluminescence from Single 3D GaN Nanowire Grown by Self-Catalytic Molecular Beam Epitaxy

Published online by Cambridge University Press:  01 February 2011

Chito E. Kendrick ,
R. Tilley ,
M. Kobayashi ,
R. J. Reeves  and
S. M. Durbin
Chito E. Kendrick
Affiliation:
chito.kendrick@elec.canterbury.ac.nz, University of Canterbury, Electrical and Computer Engineering, Private Bag 4800, Christchurch, New Zealand, Christchurch, N/A, New Zealand
R. Tilley
Affiliation:
richard.tilley@vuw.ac.nz, Victoria University of Wellington, School of Chemical and Physical Sciences, Wellington, N/A, New Zealand
M. Kobayashi
Affiliation:
cosmos@waseda.jp, Waseda University, Kagami Memorial Laboratory, Tokyo, N/A, Japan
R. J. Reeves
Affiliation:
roger.reeves@canterbury.ac.nz, University of Canterbury, Department of Physics and Astronomy, Christchurch, N/A, New Zealand
S. M. Durbin
Affiliation:
s.durbin@elec.canterbury.ac.nz, University of Canterbury, Electrical and Computer Engineering, Christchurch, N/A, New Zealand
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Abstract

3-D branching GaN nanowires have been grown using the intermediate and Ga-rich growth regimes of plasma assisted molecular beam epitaxy. Evidence that the growth is due to an auto-catalytic VLS process is obtained through SEM images showing droplet termination heads, the composition of which is essentially pure Ga. TEM analysis revealed a defect free crystal structure, even in the trunk to branch junction. Cathodoluminescence from the trunk of the branching nanowires produced a strong luminescence feature at 3.44 eV, while a slight decrease in energy to 3.1 eV was observed at the interface between the nanowire and epilayer or kink site. No yellow luminescence was detected, further suggesting a defect free growth. Preliminary I-V measurements give mixed results, suggesting intrinsic n-type nanowires.

Keywords

molecular beam epitaxy (MBE)nanostructureIII-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I07-52
Copyright
Copyright © Materials Research Society 2007

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References

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