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Hafnia surface and high-k gate stacks
Published online by Cambridge University Press: 31 January 2011
Abstract
Hafnium dioxide that belongs to a class of metal oxides with a high dielectric constant or high-k dielectrics has been recently introduced as a gate dielectric in field effect transistors. We report a theoretical study of structural and electronic properties of hafnia surface, and the electronic structure and band alignment at hafnia interfaces with metals, oxides and semiconductors that are crucial in gate stack engineering.
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- Research Article
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- Copyright © Materials Research Society 2009