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Velocity and Orientation Dependence of Solute Trapping In Si
Published online by Cambridge University Press: 15 February 2011
Abstract
The segregation phenomena of In, Ga and Bi in Si have been investigated as a function of the liquid-solid interface velocity following laser irradiation. The crystallization velocity has been changed within the range 0.8–5 m/s by varying either the substrate temperature during irradiation or the laser pulse duration. The measured interfacial segregation coefficients depend critically on the velocity and on the crystal orientation of the solidifying plane.
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- Copyright © Materials Research Society 1981
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