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Growth of Monocrystalline Cosi2 on Cosi2 Seeds in (100)Si
Published online by Cambridge University Press: 25 February 2011
Abstract
Growth of monocrystalline CoSi2 on top of (100) Si has been obtained by silicidation of deposited Co films on Si/CoSi2/Si heterostructures formed by ion implantation. The layers are of excellent crystalline quality and the CoSi2/Si interface is atomically flat. The required implanted dose can be reduced, since epitaxial silicidation is possible starting from aligned CoSi2 precipitates in the Si.
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- Copyright © Materials Research Society 1990
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