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FERROELECTRIC THIN FILM SYSTEM IN PACKAGE DEVICES WITH INTEGRATED CAPACITORS OF 100 nF/mm2 & BREAKDOWN VOLTAGES OF 90 V
Published online by Cambridge University Press: 01 February 2011
Abstract
Thin film ferroelectric capacitors have been integrated with resistors and active functions such as ESD protection into small miniaturized modules, which enable a board space saving of up to 80%. With the optimum materials and processes, integrated capacitors with capacitance densities of up to 100 nF/mm2 and breakdown voltages of up to 90 V have been achieved. The integration of these high density capacitors with extremely high breakdown voltage is a revolution in the world of integrated passive components and has not yet been achieved in any other passive integration technology.
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- Copyright © Materials Research Society 2008