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Organic Field Effect Transistor using BaTiO3-Mn Doped and P(VDF-TrFE) for Non Volatile Memory Application

Published online by Cambridge University Press:  01 February 2011

Sambit Pattnaik ,
Ashish Garg  and
Monica Katiyar
Sambit Pattnaik
Affiliation:
sambitp@iitk.ac.in, Indian Institute of Technology Kanpur, Department of Materials and Metallurgical Engineering, WL-106, Kanpur, 208016, India
Ashish Garg
Affiliation:
ashishg@iitk.ac.in, Indian Institute of Technology Kanpur, Department of Materials and Metallurgical Engineering, Kanpur, 208016, India
Monica Katiyar
Affiliation:
mk@iitk.ac.in, Indian Institute of Technology Kanpur, Department of Materials and Metallurgical Engineering, Kanpur, 208016, India
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Abstract

Here, we report fabrication of an organic field effect transistor that can be used as a memory device. We have evaluated inorganic ferroelectric insulator manganese doped barium titanate(BTO), organic poly(vinylidene fluoride trifluoroethylene) P(VDF-TrFE), and their composite. The inorganic and organic ferroelectrics were fabricated using low cost process of spin coating followed by annealing to enhance crystallinity. The ferroelectric phase evolution is assessed by X-ray diffraction, MIM structure is used to study polarization behaviour and leakage current. Finally, OFETs are fabricated using thermal evaporation of 75 nm of pentacene. Gold electrodes of 70 nm were evaporated for the top contact devices keeping W/L=40. The OFET devices, for BTO/P(VDF-TrFE) composite insulator, showed memory effect with shift in threshold voltage of 8.5 ± 1.5V.

Keywords

memoryorganicthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1071: Symposium F – Materials Science and Technology for Nonvolatile Memories , 2008 , 1071-F03-10
Copyright
Copyright © Materials Research Society 2008

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References

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