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Silicon Carbide Structures Prepared by Rapid Thermal Chemical Vapor Deposition

Published online by Cambridge University Press:  25 February 2011

J.L. Crowley ,
J.C. Liao ,
P.H. Kleins  and
G.J. Campisi
J.L. Crowley
Affiliation:
Peak Systems Inc., Fremont, California 94538
J.C. Liao
Affiliation:
Peak Systems Inc., Fremont, California 94538
P.H. Kleins
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
G.J. Campisi
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
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Abstract

The deposition of beta Silicon Carbide unto single crystal silicon (100) wafers using rapid thermal chemical vapor deposition (RTCVD) has been carried out using silane and ethylene as the source gases. Deposition temperatures were varid from 1100°C to 1300°C. Auger analysis revealed the silicon carbide films to be stoichiometric at all temperatures. Infrared spectroscopy data taken between 1200 cm−1 and 60° Cm−1 show the appearance of the longitudinal optical phonon at 974 cm−1 and the transverse optical phonon at 794 cm−1 in samples deposited at 1200°C and above. Stress in the films deposited on the single crystal silicon substrates is seen to go from zero or slightly compressive at 11O0°C to strongly tensile at 1300°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 103
Copyright
Copyright © Materials Research Society 1989

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References

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