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Preparation and Characterization of High-Surface-Area Aluminum Nitride Thin Films

Published online by Cambridge University Press:  10 February 2011

S. A. Monie  and
C. G. Pantano
S. A. Monie
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA-16802.
C. G. Pantano
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA-16802.
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Abstract

Free-standing aluminum nitride (AlN) films were prepared by ammonia heat-treatment of pseudoboehmite [AIO(OH)] gels derived from an alumina sol. Supported films on sapphire substrates were also made by spin-coating the alumina sol, followed by ammonia nitridation. The conversion of the specimens to AIN as a function of heat-treatment temperature was studied using various characterization techniques.

For the free-standing films, X-ray diffraction (XRD) showed that upon ammonia treatment, the specimens were first transformed from pseudoboehmite to η-alumina and finally to A1N above 1000°C. 27Al magic-angle spinning nuclear magnetic resonance (MAS-NMR) spectroscopy confirmed the appearance of Al[N]4 coordination at 1000°C, indicative of AlN. Complete conversion to AlN was achieved after 5 hour nitridation at 1200°C. The 1200°C heat-treated films consisted of crystallites of AlN in the size range 0.01 − 0.15 μm, with pores between 0.03 − 0.25 μm in diameter, as observed by TEM/electron diffraction analyses. These films had BET surface areas of approximately 25 m2/g. Nitridation of the supported films to AlN occurred at lower temperatures (∼900°C), as shown by secondary ion mass spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 454: Symposium S – Advanced Catalytic Materials–1996 , 1996 , 53
Copyright
Copyright © Materials Research Society 1997

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References

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