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Studies of Alq/Mg: Ag Interface in Organic Light-Emitting Diodes by XPS

Published online by Cambridge University Press:  01 February 2011

X. D. Feng ,
D. Grozea ,
A. Turak ,
Z. H. Lu ,
H. Aziz  and
A-M. Hor
X. D. Feng
Affiliation:
Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4, Canada
D. Grozea
Affiliation:
Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4, Canada
A. Turak
Affiliation:
Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4, Canada
Z. H. Lu
Affiliation:
Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4, Canada
H. Aziz
Affiliation:
Xerox Research Centre of Canada, Mississauga, Ontario L5K 2L1, Canada
A-M. Hor
Affiliation:
Xerox Research Centre of Canada, Mississauga, Ontario L5K 2L1, Canada
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Abstract

The organic/cathode interface plays an important role in device degradation of organic light-emitting diodes (OLEDs). The interface between 8-hydroxyquinolino aluminium (Alq) and Mg:Ag cathode in OLEDs, operated for some time, was characterized using Xray photoemission spectroscopy (XPS). An in-vacuum peel-off method was used to separate the buried interfaces. XPS results indicate that Alq molecules break down, resulting in formation of fragmented hydroxyquinolino, Mg oxides, and metallic Al at the interface. It is also found by XPS depth-profiling measurement that metallic Al diffuses into the cathode electrode, and that the fraction of oxidized Mg decreases gradually from the interface but extended very deep into the cathode.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 725: Symposium P – Organic and Polymeric Materials and Devices-Optical, Electrical, and Optoelectronic Properties , 2002 , P4.8
Copyright
Copyright © Materials Research Society 2002

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References

1. Paker, I.D. J. Appl. Phys. 75, 1656 (1994)Google Scholar
2 Hung, L.S. Tang, C.W. and Mason, M.G. Appl. Phys. Lett. 70, 152 (1997)Google Scholar
3 McElvain, J. Antoniads, H. Hueschen, M. R. Miller, J. N. Roitman, D. M. Sheats, J. R. and Moon, R. L. J. Appl. Phys. 80, 6002 (1996)Google Scholar
4 Liew, Y. F. Aziz, H. Hu, N. X. Chan, H. S.-O., Xu, G. and Popovic, Z. Appl. Phys. Lett. 77, 2650 (2000)Google Scholar
5 Kolosov, D. English, D.S. Bulovic, V. Barbara, P.F. Forrest, S.R. and Thompson, M.E. J. Appl. Phys. 90, 3242 (2001)Google Scholar
6 Ishii, H. Sugiyama, K. Ito, E. and Seki, K. Adv. Mater. 11, 605 (1999)Google Scholar
7 Shen, C.F. Hill, I.G., Kahn, A., and Schwartz, J. J. Am. Chem. Soc. 122, 5391 (2000)Google Scholar
8 Yan, L., Mason, M.G. Tang, C.W., and Gao, Y.L, Appl. Surf. Sci. 175-176, 412 (2001)Google Scholar
9 Tang, C. W. and Slyke, S. A. Van, Appl. Phys. Lett. 51, 913 (1987)Google Scholar
10 Feng, X. D. Grozea, D. Turak, A. Lu, Z. H. Aziz, H. and Hor, A-M., in preparation.Google Scholar
11 Zhang, R. Q. Hou, X. Y. and Lee, S. T. Appl. Phys. Lett. 74, 1612 (1999)Google Scholar