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Initial Stages of Silicon Growth on the (100) Surface of Silicon By Localized Laser Cvd
Published online by Cambridge University Press: 26 February 2011
Abstract
This paper reports initial results of an experimental study of the early stages of silicon thin film growth on well prepared (100) c-Si surfaces by pyrolytic deposition from silane (SiH4) during localized laser chemical vapor deposition (LLCVD). The rate of silicon thin film growth during low pressure (< 10 Torr) deposition using tightly focussed laser beams (514.5 nm, ∼ 2.5 μm FWHM) is characterized and is shown to be much slower than expected based on the previously measured silane decomposition rate. Hybrid-heating experiments, in which laser heating induces a slight temperature increase on a uniformly heated substrate in the presence of silane gas, shows that growth is inhibited within the laser irradiation region. This result suggests that a nonpyrolytic mechanism contributes to silicon growth in laser CVD. Possible explanations for this nonpyrolytic growth mechanism are discussed.
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- Copyright © Materials Research Society 1998