Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Job, R.
Fahrner, W. R.
Ivanov, A. I.
Palmetshofer, L.
and
Ulyashin, A. G
1998.
Comparison of Oxygen and Hydrogen Gettering at High-Temperature Post-Implantation Annealing of Hydrogen and Helium Implanted Czochralski Silicon.
MRS Proceedings,
Vol. 510,
Issue. ,
Job, R.
Fahrner, W. R.
Kazuchits, N. M.
and
Ulyashin, A. G.
1998.
A Two-Step Low-Temperature Process For A P-N Junction Formation Due To Hydrogen Enhanced Thermal Donor Formation In P-Type Czochralski Silicon.
MRS Proceedings,
Vol. 513,
Issue. ,
Ulyashin, A.G.
Ivanov, A.I.
Khorunzhii, I.A.
Job, R.
Fahrner, W.R.
Komarov, F.F.
and
Kamyshan, A.C.
1999.
Hydrogen redistribution and enhanced thermal donor formation at post implantation annealing of p-type hydrogen implanted Czochralski silicon.
Materials Science and Engineering: B,
Vol. 58,
Issue. 1-2,
p.
91.
Ulyashin, A.G
Ivanov, A.I
Job, R
Fahrner, W.R
Frantskevich, A.V
Komarov, F.F
and
Kamyshan, A.C
2000.
The hydrogen gettering at post-implantation hydrogen plasma treatments of helium- and hydrogen implanted Czochralski silicon.
Materials Science and Engineering: B,
Vol. 73,
Issue. 1-3,
p.
64.
Ulyashin, K.G.
Job, R.
and
Fahrner, W.F.
2000.
Atomic hydrogen catalysis for the formation of oxygen related nanoclusters in silicon: applications to low-temperature device production.
Vol. 3,
Issue. ,
p.
1889.
Job, R
Fahrner, W.R
and
Ulyashin, A.G
2000.
Electronic device fabrication by simple hydrogen enhanced thermal donor formation processes in p-type Cz-silicon.
Materials Science and Engineering: B,
Vol. 73,
Issue. 1-3,
p.
197.
Ulyashin, A.G.
Khorunzhii, I.A.
Job, R.
and
Fahrner, W.R.
2000.
Characterization of the oxygen distribution in Czochralski silicon using hydrogen-enhanced thermal donor formation.
Materials Science and Engineering: B,
Vol. 73,
Issue. 1-3,
p.
124.
Ulyashin, A.G.
Job, R.
Khorunzhii, I.A.
and
Fahrner, W.R.
2001.
Hydrogen enhanced thermal donor formation in p-type Czochralski silicon: application to low temperature active defect-engineering.
Physica B: Condensed Matter,
Vol. 308-310,
Issue. ,
p.
185.
Job, R.
Ulyashin, A.G.
Huang, Y.L.
Fahrner, W.R.
Simoen, E.
Claeys, C.
Niedernostheide, F.-J.
Schulze, H.-J.
and
Tonelli, G.
2002.
Doping of Oxidized Float Zone Silicon by Thermal Donors - a Low Thermal Budget Doping Method for Device Applications?.
MRS Proceedings,
Vol. 719,
Issue. ,
Job, R
Ulyashin, A.G
Fahrner, W.R
Simoen, E
Claeys, C
and
Tonelli, G
2002.
Hydrogen enhanced thermal donor formation in oxygen enriched high resistive float-zone silicon.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms,
Vol. 186,
Issue. 1-4,
p.
116.
Job, R.
Ma, Y.
and
Ulyashin, A. G.
2003.
Structuring of Silicon Wafer Surfaces on the Sub-100 nm Scale by Hydrogen Plasma Treatments.
MRS Proceedings,
Vol. 788,
Issue. ,
Huang, Y. L.
Ma, Y.
Job, R.
and
Ulyashin, A. G.
2004.
Hydrogen diffusion at moderate temperatures in p-type Czochralski silicon.
Journal of Applied Physics,
Vol. 96,
Issue. 12,
p.
7080.
Simoen, E.
Huang, Y. L.
Ma, Y.
Lauwaert, J.
Clauws, P.
Rafí, J. M.
Ulyashin, A.
and
Claeys, C.
2009.
What Do We Know about Hydrogen-Induced Thermal Donors in Silicon?.
Journal of The Electrochemical Society,
Vol. 156,
Issue. 6,
p.
H434.