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The Conversion of Czochralski Silicon from P-Type to N-Type by Hydrogen Plasma Enhanced Thermal Donor Formation

Published online by Cambridge University Press:  15 February 2011

R. Job ,
D. Borchert ,
Y. A. Bumay ,
W. R. Fahrner ,
G. Grabosch ,
I. A. Khorunzhii  and
A. G. Ulyashin
R. Job
Affiliation:
University of Hagen, LGBE, Haldener Str. 182, P. O. Box 940, D-58084 Hagen, GERMANY
D. Borchert
Affiliation:
University of Hagen, LGBE, Haldener Str. 182, P. O. Box 940, D-58084 Hagen, GERMANY
Y. A. Bumay
Affiliation:
Belarussian Polytechnical Academy, Skariny Av. 65, 220027, Minsk, BELARUS
W. R. Fahrner
Affiliation:
University of Hagen, LGBE, Haldener Str. 182, P. O. Box 940, D-58084 Hagen, GERMANY
G. Grabosch
Affiliation:
University of Hagen, LGBE, Haldener Str. 182, P. O. Box 940, D-58084 Hagen, GERMANY
I. A. Khorunzhii
Affiliation:
Belarussian Polytechnical Academy, Skariny Av. 65, 220027, Minsk, BELARUS
A. G. Ulyashin
Affiliation:
Belarussian Polytechnical Academy, Skariny Av. 65, 220027, Minsk, BELARUS
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Abstract

Our experiments show a hydrogen plasma assisted creation of p-n junctions in p-type Cz silicon due to a hydrogen enhanced thermal donor (TD) formation at temperatures ≤450 °C. Applying DC or HF plasma treatments a conversion of p-type into n-type Cz silicon by TD formation occurs. One can distinguish one step processes (p-n junction formation appears just after the plasma exposure) and two step processes (p-n junction formation requires subsequent post hydrogenation annealing). The samples are studied by depth resolved spreading resistance probe (SRP), capacitance-voltage (CV) and Hall measurements. For the one step processes a kinetic model for hydrogen enhanced TD formation is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 101
Copyright
Copyright © Materials Research Society 1997

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References

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