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Fabrication of Nitrided Mask on GaAs surface and Its Machinability for STM lithography
Published online by Cambridge University Press: 01 February 2011
Abstract
A nitridation mask on a GaAs surface was prepared using RF-MBE and its machinability by STM lithography was studied. A 5.2 nm thick crystal-like layer was formed at 350°C, and was modified by STM at a sample bias of ±80V with good size reliability, which was sufficiently fine for realizing dislocation-free heteroepitaxial growth of GaAs / Si. The mask was maintained up to 620°C under As flux exposure at 1.5 × 10−4 Pa.
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- Copyright © Materials Research Society 2006
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