Hostname: page-component-848d4c4894-x5gtn Total loading time: 0 Render date: 2024-05-10T20:50:13.262Z Has data issue: false hasContentIssue false

Metallization Systems on Cvd-Diamond Substrates for Application in Multichip Modules

Published online by Cambridge University Press:  15 February 2011

W. D. Brown
Affiliation:
High Density Electronics Center (HiDEC) and the Department of Electrical Engineering, The University of Arkansas, Fayetteville, Arkansas 72701
H. A. Naseem
Affiliation:
High Density Electronics Center (HiDEC) and the Department of Electrical Engineering, The University of Arkansas, Fayetteville, Arkansas 72701
A. P. Malshe
Affiliation:
High Density Electronics Center (HiDEC) and the Department of Electrical Engineering, The University of Arkansas, Fayetteville, Arkansas 72701
J. H. Glezen
Affiliation:
High Density Electronics Center (HiDEC) and the Department of Electrical Engineering, The University of Arkansas, Fayetteville, Arkansas 72701
W. D. Hinshaw
Affiliation:
High Density Electronics Center (HiDEC) and the Department of Electrical Engineering, The University of Arkansas, Fayetteville, Arkansas 72701
Get access

Abstract

Because of its high thermal conductivity, free-standing CVD-diamond is an extremely attractive material for application as the substrate in multichip modules (MCMs). However, this material does present some technological challenges, one being the development of reliable metallization systems. In this work, adherent metallization systems, such as Au/Ti, Au/Ti-W, Au/Ni-Cr, Au/Cr and Cu/Cr have been produced at low temperatures. Thin adhesion/seed metal layers were deposited using sputtering and evaporation techniques. Gold and copper metallization of several microns thickness was accomplished by electroplating over the thin metal layer. Post-deposition annealing of both the adhesion/seed layer and plated metallization systems were performed at temperatures up to 500°C in an effort to enhance adhesion and determine the impact of subsequent high temperature operations on reliability issues such as intermetallic diffusion, delamination, and the impact of surface microcavities. Extremely adherent Au/Cr and Cu/Cr metallization systems appropriate for use in MCM technology were developed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Kearney, K. M., Semiconductor International, 44, (February 1989).Google Scholar
2 Moazed, K. L., Zeidler, J. R., and Taylor, M. J., J. Appl. Phys., 68(5) 2246 (1990).Google Scholar
3 Meyyappan, I., Malshe, A. P., Naseem, H. A., and Brown, W. D., 253, 407 (1994).Google Scholar
4 Naseem, H. A., Meyyappan, I., Prasad, C. S., and Brown, W. D., Intl. J. Microcir. and Elect. Packaging, 16(4), 257 (1993).Google Scholar
5 Chin-An Chang, Thin Solid Films, 166, 97 (1988).Google Scholar
6 Prasad, Chilakamarri, Ilango, Meyyappan, Naseem, H. A., and Brown, W. D., Mat. Res. Soc. Symp. Proc., 323, 195 (1994).Google Scholar
7 Gennady, Gildenblat, S. H., Stephen, Grot, A., and Andrzej, Badzian, Proc. IEEE, 79(5), 647 (1991).Google Scholar
8 Naseem, H. A., Meyyappan, I., Prasad, C. S., and Brown, W. D., Proc. 1993 Intl. Conf. MCMs, 62 (1993).Google Scholar