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CVD Growth and Excimer Laser Processing of SiGe Alloys Monitored by Single Wavelength Ellipsometry and Atomic Force Microscopy
Published online by Cambridge University Press: 10 February 2011
Abstract
Single wavelength ellipsometry was used to monitor the CVD growth of Si(1-x)Gex alloys onSi and to evaluate the effect of sample irradiation by KrF laser pulses, performed during or afterthe CVD growth. The information obtained was correlated with AFM analysis results in order tooptimize the growth parameters for an improved morphological quality of the alloy layers.
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- Copyright © Materials Research Society 1998