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Lomer Dislocations in (0 0 1) GaSb/GaAs Heterostructure.
Published online by Cambridge University Press: 25 February 2011
Abstract
The (001) GaSb/GaAs heterostructure reveals a nearly complete relaxation of the misfit strain. This relaxation is connected to the highly regular network of Lomer dislocations which is a consequence of island growth conditions.
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- Copyright © Materials Research Society 1992
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