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Electrical Characteristics of BaxSr1-xTiO3(BST) Capacitors Implemented with Ti-Al Electrodes
Published online by Cambridge University Press: 01 February 2011
Abstract
Ti-Al was used as the electrode for RF magnetron sputtered BST film at a substrate temperature of 450°C for decoupling capacitor applications. X-ray diffraction analysis shows that the deposited film BST film is amorphous. Electrical characterizations of the devices performed by capacitance versus voltage measurements show a dielectric constant of about 55. With increase in annealing temperature above 450°C, the capacitance was found to decrease significantly.
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- Copyright © Materials Research Society 2006