Hostname: page-component-848d4c4894-x5gtn Total loading time: 0 Render date: 2024-05-06T00:03:33.110Z Has data issue: false hasContentIssue false
  • English
  • Français

Microstructural Behavior of Poly-Si Implanted with Oxygen

Published online by Cambridge University Press:  25 February 2011

N. David Theodore ,
WenLing M. Huang  and
Peter A. Crozier
N. David Theodore
Affiliation:
Motorola Inc., Advanced Technology Center, 2200 W. Broadway Rd., Mesa, AZ 85202
WenLing M. Huang
Affiliation:
Motorola Inc., Advanced Technology Center, 2200 W. Broadway Rd., Mesa, AZ 85202
Peter A. Crozier
Affiliation:
Motorola Inc., Advanced Technology Center, 2200 W. Broadway Rd., Mesa, AZ 85202
Get access

Abstract

Poly-Si layers are used for various applications in integrated-circuit manufacturing technology. In most cases, the microstructure of the layers can have a significant impact on performance of the structures. In the present study, poly-Si layers implanted with 1E14 and 1E16 oxygen cm-2 were characterized using transmission electron-microscopy (TEM). Layers implanted with 1E16 cm-2 oxygen had exhibited lower variations in sheet-resistance for a given variation in post-implant anneal temperature. The microstructural behavior of the films was therefore of interest. TEM characterization showed differences in the microstructure of poly-Si implanted with 1E14 and 1E16 oxygen cm-2. Layers implanted with 1E14 doses showed a columnar grain-structure similar to as-deposited poly-Si layers. Grain-sizes were quite uniform and relatively small. Layers implanted with 1E16 doses showed a strongly defected grain-structure quite different from as-deposited poly-Si layers. The columnar structure had been largely destroyed. Grain-sizes were less uniform, with primarily large grains but also small grains being present. There are indications that the 1E16 samples had been amorphized by the implant and recrystallized by the anneal, but it is not clear from these samples whether this is the cause for the variation in resistance-behavior (between IE 14 and IE 16 samples). TEM micrographs are indicative of the presence of oxygen-bubbles in both sets of implanted specimens. The bubbles arise due to the oxygen implant. There is no noticeable correlation between poly-Si grain-boundaries and the bubbles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 238: Symposium Cb – Structure and Properties of Interfaces in Materials , 1991 , 107
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kamins, T., Polycrystalline Silicon for Integrated Circuit Applications. (Kluwer Academic Publishers, Boston, 1988).CrossRefGoogle Scholar
2. Hammond, M.L., Mat. Res. Soc. Symp. Proc. Vol. 182, 3 (1990).CrossRefGoogle Scholar
3. Shibata, H. et al, Tech. Dig. 1987 Symp. on VLSI Technology (Japan Soc. Appl. Phys.) 75 (1987).Google Scholar
4. Lu, N.C.C., IEEE Circuits and Devices Mag., 27 (1989).CrossRefGoogle Scholar
5. Inoue, S. et al, IEDM Tech. Dig. 31 (1989).Google Scholar
6. Kazmerski, L., Int. Mat. Rev. 34, 185 (1989).CrossRefGoogle Scholar
7. Ikeda, K. et al, Tech. Dig. 7th Sensor Symp. (Japan Info. Center of Sc. and Tech.) 193 (1988).Google Scholar
8. Fejes, P., private communication, Motorola Inc., (1991).Google Scholar
9. Beadle, W.E. et al (eds.), Quick Reference Manual for Silicon IC Technology, 1985 (John Wiley & Sons).Google Scholar